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| STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmeshTMPower MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS 600 V 600 V 600 V RDS(on) <0.45 <0.45 <0.45 ID 11 A 11 A 11 A 3 1 2 TYPICAL RDS(on) = 0.4 HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 TO-220 3 1 2 I2PAK DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 MARKING P11NM60A P11NM60AFP B11NM60A PACKAGE TO-220 TO-220FP I2PAK PACKAGING TUBE TUBE TUBE March 2002 1/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP11NM60A STB11NM60A-1 Value STP11NM60AFP Unit VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 11 7 44 110 0.88 600 600 30 11 (*) 7 (*) 44 (*) 35 0.28 15 2500 -55 to 150 -55 to 150 V V V A A A W W/C V/ns V C C (l) Pulse width limited by safe operating area (1) I SD 11A, di/dt 200A/s, VDD V (BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 / I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.13 62.5 300 TO-220-FP 3.57 C/W C/W C ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 5.5 A 2 3 0.4 Min. 600 1 10 100 4 0.45 Typ. Max. Unit V A A nA V 2/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS = 15 V, ID = 5.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 10 1211 248 21 116 1.9 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 480V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDD = 300 V, ID = 5.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 11 A, VGS = 10V Min. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Typ. 14 15 35 9 14 49 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 11 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 39 10 20 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, VGS = 0 ISD = 11 A, di/dt = 100A/s VDD = 100V, Tj = 150C (see test circuit, Figure 5) 560 5.7 20.5 Test Conditions Min. Typ. Max. 11 44 1.5 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Safe Operating Area for TO-220 / I2PAK Safe Operating Area for TO-220FP Thermal Impedance for TO-220 / I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics 4/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Source-drain Diode Forward Characteristics 6/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 8/11 F2 F G H2 STP11NM60A/STP11NM60AFP/STB11NM60A-1 TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D F G1 E H F2 123 L2 L4 G 9/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E 10/11 e A1 C STP11NM60A/STP11NM60AFP/STB11NM60A-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 11/11 |
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